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IRLML5203TRPBF IC Chip P-Channel 30 V 3A 1.25W Surface Mount Micro3™ / SOT-23
Product Details:
| Place of Origin: | Original |
| Brand Name: | Original |
| Certification: | Original |
| Model Number: | IRLML5203TRPBF |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1 |
|---|---|
| Price: | negotiation |
| Packaging Details: | carton box |
| Delivery Time: | 1-3working days |
| Payment Terms: | T/T |
| Supply Ability: | 100,000 |
|
Detail Information |
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| FET Type: | P-Channel | Drain To Source Voltage (Vdss): | 30 V |
|---|---|---|---|
| Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) | Rds On (Max) @ Id, Vgs: | 98mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA | Gate Charge (Qg) (Max) @ Vgs: | 14 NC @ 10 V |
| High Light: | IRLML5203TRPBF IC Chip,P Channel IRLML5203TRPBF,3A 1.25W Surface Mount Circuit Chip |
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Product Description
IRLML5203TRPBF IC Chip P-Channel 30 V 3A 1.25W Surface Mount Micro3™ / SOT-23
Features of IRLML5203TRPBF
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Low Gate Charge
Lead-Free
RoHS Compliant, Halogen-Free
Product Attributes of IRLML5203TRPBF
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Product
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IRLML5203TRPBF
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FET Type
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P-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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30 V
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Current - Continuous Drain (Id) @ 25°C
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3A (Ta)
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Drive Voltage (Max Rds On, Min Rds On)
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4.5V, 10V
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Rds On (Max) @ Id, Vgs
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98mOhm @ 3A, 10V
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Vgs(th) (Max) @ Id
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2.5V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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14 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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510 pF @ 25 V
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FET Feature
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-
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Power Dissipation (Max)
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1.25W (Ta)
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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Micro3™/SOT-23
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Package / Case
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TO-236-3, SC-59, SOT-23-3
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Base Product Number
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IRLML5203
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Environmental & Export Classifications of IRLML5203TRPBF
| ATTRIBUTE | DESCRIPTION |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
Description of IRLML5203TRPBF
These P-channel MOSFETs from International Rectifier utilize
advanced processing techniques to achieve the extremely low
on-resistance per silicon area. This benefit provides the
designer with an extremely efficient device for use in battery
and load management applications.
A thermally enhanced large pad leadframe has been
incorporated into the standard SOT-23 package to produce a
HEXFET Power MOSFET with the industry's smallest footprint.
This package, dubbed the Micro3TM, is ideal for applications
where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro3 allows it to fit easily into
extremely thin application environments such as portable
electronics and PCMCIA cards. The thermal resistance and
power dissipation are the best available.
