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8-PQFN FDMS8460 Transistor IC Chip N Channel 40V 25A 49A 2.5W 104W
Product Details:
| Place of Origin: | Original |
| Brand Name: | Original |
| Certification: | Original |
| Model Number: | FDMS8460 |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1 |
|---|---|
| Price: | negotiation |
| Packaging Details: | carton box |
| Delivery Time: | 1-3working days |
| Payment Terms: | T/T |
| Supply Ability: | 100,000 |
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Detail Information |
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| Drain To Source Voltage (Vdss): | 40 V | Current - Continuous Drain (Id) @ 25°C: | 25A (Ta), 49A (Tc) |
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| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V | Rds On (Max) @ Id, Vgs: | 2.2mOhm @ 25A, 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 110 NC @ 10 V | Vgs (Max): | ±20V |
| High Light: | 8-PQFN FDMS8460,FDMS8460 Transistor IC Chip,IC Chip N Channel 40V 25A |
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Product Description
FDMS8460 Transistor IC Chip N-Channel 40 V 25A 49A 2.5W 104W 8-PQFN (5x6)
Features of FDMS8460
• Max rDS(on) = 2.2 m at VGS = 10 V, ID = 25 A
• Max rDS(on) = 3.0 m at VGS = 4.5 V, ID = 21.7 A
• Advanced Package and Silicon combination for low rDS(on)
• MSL1 robust package design
• 100% UIL tested
• RoHS Compliant
Product Attributes of FDMS8460
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Product
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FDMS8460
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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40 V
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Current - Continuous Drain (Id) @ 25°C
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25A (Ta), 49A (Tc)
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Drive Voltage (Max Rds On, Min Rds On)
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4.5V, 10V
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Rds On (Max) @ Id, Vgs
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2.2mOhm @ 25A, 10V
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Vgs(th) (Max) @ Id
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3V @ 250µA
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Gate Charge (Qg) (Max) @ Vgs
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110 nC @ 10 V
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Vgs (Max)
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±20V
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Input Capacitance (Ciss) (Max) @ Vds
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7205 pF @ 20 V
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FET Feature
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-
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Power Dissipation (Max)
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2.5W (Ta), 104W (Tc)
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Operating Temperature
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-55°C ~ 150°C (TJ)
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Mounting Type
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Surface Mount
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Supplier Device Package
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8-PQFN (5x6)
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Package / Case
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8-PowerTDFN
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Base Product Number
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FDMS84
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Applications of FDMS8460
DC−DC Conversion
Environmental & Export Classifications of FDMS8460
| ATTRIBUTE | DESCRIPTION |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
General Description of of FDMS8460
This N−Channel MOSFET is produced using ON Semiconductor’s advanced POWERTRENCH® process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
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