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IRFR2607ZTRPBF Transistor IC Chip N Channel PG-TO252-3-901 DPAK 75V 42A
Product Details:
| Place of Origin: | Original |
| Brand Name: | Original |
| Certification: | Original |
| Model Number: | IRFR2607ZTRPBF |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1 |
|---|---|
| Price: | negotiation |
| Packaging Details: | carton box |
| Delivery Time: | 1-3working days |
| Payment Terms: | T/T |
| Supply Ability: | 100,000 |
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Detail Information |
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| FET Type: | N-Channel | Drain To Source Voltage (Vdss): | 75 V |
|---|---|---|---|
| Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) | Rds On (Max) @ Id, Vgs: | 22mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 50µA | Gate Charge (Qg) (Max) @ Vgs: | 51 NC @ 10 V |
| High Light: | IRFR2607ZTRPBF,75V 42A Transistor IC Chip,N Channel IRFR2607ZTRPBF |
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Product Description
IRFR2607ZTRPBF Transistor IC Chip N-Channel 75 V 42A PG-TO252-3-901| DPAK
Features of IRFR2607ZTRPBF
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjamx
Lead-Free
Product Attributes of IRFR2607ZTRPBF
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Product
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IRFR2607ZTRPBF
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FET Type
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N-Channel
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Technology
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MOSFET (Metal Oxide)
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Drain to Source Voltage (Vdss)
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75 V
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Current - Continuous Drain (Id) @ 25°C
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42A (Tc)
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Rds On (Max) @ Id, Vgs
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22mOhm @ 30A, 10V
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Vgs(th) (Max) @ Id
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4V @ 50µA
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Gate Charge (Qg) (Max) @ Vgs
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51 nC @ 10 V
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Input Capacitance (Ciss) (Max) @ Vds
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1440 pF @ 25 V
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FET Feature
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-
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Mounting Type
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Surface Mount
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Supplier Device Package
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PG-TO252-3-901|DPAK
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Package / Case
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TO-252-3, DPak (2 Leads + Tab), SC-63
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Base Product Number
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IRFR2607
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Environmental & Export Classifications of IRFR2607ZTRPBF
| ATTRIBUTE | DESCRIPTION |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
Description of IRFR2607ZTRPBF
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of this design are a 175°C junction operating
temperature, fast switching speed and improved repetitive avalanche rating. These features combine
to make this design an extremely efficient and reliable device for use in a wide variety of applications.
