• FDN358P Transistor Integrated Circuit P Channel  30V 1.5A 500mW Sot23 3 Package
FDN358P Transistor Integrated Circuit P Channel  30V 1.5A 500mW Sot23 3 Package

FDN358P Transistor Integrated Circuit P Channel 30V 1.5A 500mW Sot23 3 Package

Product Details:

Place of Origin: Original
Brand Name: Original
Certification: Original
Model Number: FDN358P

Payment & Shipping Terms:

Minimum Order Quantity: 1
Price: negotiation
Packaging Details: carton box
Delivery Time: 1-3working days
Payment Terms: T/T
Supply Ability: 100,000
Get Best Price Contact Now

Detail Information

FDN335N Transistor IC Chip P-Channel 20 V 1.7A 1W Surface Mount SOT-23: 30 V Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6 NC @ 10 V Vgs (Max): ±20V
High Light:

P Channel FDN358P

,

FDN358P 30V 1.5A

,

Sot23 3 Package Transistor Integrated Circuit

Product Description

FDN358P Transistor IC Chip P-Channel 20 V 1.7A 1W Surface Mount SOT-23

 

FDN358P P-Channel 30 V 1.5A (Ta) 500mW (Ta) Surface Mount SOT-23-3

 

Features of FDN358P

 

–1.5 A, –30 V. RDS(ON) = 125 mΩ @ VGS = –10 V RDS(ON) = 200 mΩ @ VGS = –4.5 V
• Low gate charge (4 nC typical)
• High performance trench technology for extremely low RDS(ON) .
• High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability.

 

Product Attributes  of FDN358P

 

Product 
FDN358P
FET Type
P-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
125mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id
3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
5.6 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
182 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
500mW (Ta)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3
Package / Case
TO-236-3, SC-59, SOT-23-3
Base Product Number
FDN358

 

Environmental & Export Classifications of FDN358P

 

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095

 

FDN358P Transistor Integrated Circuit P Channel  30V 1.5A 500mW Sot23 3 Package 0

 

Want to Know more details about this product
I am interested in FDN358P Transistor Integrated Circuit P Channel 30V 1.5A 500mW Sot23 3 Package could you send me more details such as type, size, quantity, material, etc.
Thanks!
Waiting for your reply.