FDN335N Transistor IC Chip 20V 1.7A 1W P Channel Mosfet Ic Surface Mount SOT-23
Product Details:
Place of Origin: | Original |
Brand Name: | Original |
Certification: | Original |
Model Number: | FDN335N |
Payment & Shipping Terms:
Minimum Order Quantity: | 1 |
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Price: | negotiation |
Packaging Details: | carton box |
Delivery Time: | 1-3working days |
Payment Terms: | T/T |
Supply Ability: | 100,000 |
Detail Information |
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FDN335N Transistor IC Chip P-Channel 20 V 1.7A 1W Surface Mount SOT-23: | 20 V | Current - Continuous Drain (Id) @ 25°C: | 1.7A (Ta) |
---|---|---|---|
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 4.5V | Rds On (Max) @ Id, Vgs: | 1.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 3.5 NC @ 4.5 V | Vgs (Max): | ±8V |
High Light: | FDN335N Transistor IC Chip,1.7A 1W P Channel Mosfet Ic,20V 1.7A Transistor IC Chip |
Product Description
FDN335N Transistor IC Chip P-Channel 20 V 1.7A 1W Surface Mount SOT-23
Features of FDN335N
● TrenchFET Power MOSFET
● Supper high density cell design
Product Attributes of FDN335N
Product
|
FDN335N
|
FET Type
|
P-Channel
|
Technology
|
MOSFET (Metal Oxide)
|
Drain to Source Voltage (Vdss)
|
20 V
|
Current - Continuous Drain (Id) @ 25°C
|
1.7A (Ta)
|
Drive Voltage (Max Rds On, Min Rds On)
|
2.5V, 4.5V
|
Rds On (Max) @ Id, Vgs
|
70mOhm @ 1.7A, 4.5V
|
Vgs(th) (Max) @ Id
|
1.5V @ 250µA
|
Gate Charge (Qg) (Max) @ Vgs
|
3.5 nC @ 4.5 V
|
Vgs (Max)
|
±8V
|
Input Capacitance (Ciss) (Max) @ Vds
|
310 pF @ 10 V
|
FET Feature
|
-
|
Power Dissipation (Max)
|
1W (Ta)
|
Operating Temperature
|
150°C (TJ)
|
Mounting Type
|
Surface Mount
|
Supplier Device Package
|
SOT-23
|
Package / Case
|
TO-236-3, SC-59, SOT-23-3
|
Environmental & Export Classifications of FDN335N
ATTRIBUTE | DESCRIPTION |
---|---|
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Application of FDN335N
※ Battery protection
※ Load switch
※ Battery management
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