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TC58NVG1S3HTA00 FLASH NAND SLC Memory IC 2Gbit Parallel 25 Ns 48-TSOP
Product Details:
| Place of Origin: | original |
| Brand Name: | original |
| Certification: | original |
| Model Number: | TC58NVG1S3HTA00 |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1 |
|---|---|
| Price: | negotiation |
| Packaging Details: | carton box |
| Delivery Time: | 1-3working days |
| Payment Terms: | T/T |
| Supply Ability: | 100,000 |
|
Detail Information |
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| Memory Type: | Non-Volatile | Memory Format: | FLASH |
|---|---|---|---|
| Technology: | FLASH - NAND (SLC) | Memory Size: | 2Gbit |
| Memory Organization: | 256M X 8 | Memory Interface: | Parallel |
| Write Cycle Time - Word, Page: | 25ns | Access Time: | 25 Ns |
| High Light: | TC58NVG1S3HTA00,48-TSOP memory ic |
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Product Description
TC58NVG1S3HTA00 FLASH - NAND (SLC) Memory IC 2Gbit Parallel 25 ns 48-TSOP
Specifications of TC58NVG1S3HTA00
| TYPE | DESCRIPTION |
| Category | Integrated Circuits (ICs) |
| Memory | |
| Memory | |
| Mfr | Kioxia America, Inc. |
| Series | - |
| Package | Tray |
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND (SLC) |
| Memory Size | 2Gbit |
| Memory Organization | 256M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 25ns |
| Access Time | 25 ns |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 48-TFSOP (0.724", 18.40mm Width) |
| Supplier Device Package | 48-TSOP I |
| Base Product Number | TC58NVG1 |
Features of TC58NVG1S3HTA00
* Organization
- Memory cell array 2176 128K 8
- Register 2176 8
- Page size 2176 bytes
- Block size (128K 8K) bytes
* Modes
- Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy,
- Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
* Mode control
- Serial input/output
- Command control
* Number of valid blocks
- Min 2008 blocks
- Max 2048 blocks
* Power supply
- VCC 2.7V to 3.6V
* Access time
- Cell array to register 25 s max
- Read Cycle Time 25 ns min (CL=50pF)
* Program/Erase time
- Auto Page Program 300 s/page typ.
- Auto Block Erase 2.5 ms/block typ.
* Operating current
- Read (25 ns cycle) 30 mA max
- Program (avg.) 30 mA max
- Erase (avg.) 30 mA max
- Standby 50 A max
Introductions of TC58NVG1S3HTA00
The TC58NVG1S3HTA00 is a single 3.3V 2Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 128) bytes 64 pages 2048 blocks.
Environmental & Export Classifications of TC58NVG1S3HTA00
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991A2 |
| HTSUS | 8542.32.0071 |
