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S29WS256P0PBFW000 Temperature Sensor Chip Ic Flash 256mbit Parallel 84fbga
Product Details:
| Place of Origin: | original |
| Brand Name: | original |
| Certification: | original |
| Model Number: | S29WS256P0PBFW000 |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1 |
|---|---|
| Price: | negotiation |
| Packaging Details: | carton box |
| Delivery Time: | 1-3working days |
| Payment Terms: | T/T, L/C |
| Supply Ability: | 100,000 |
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Detail Information |
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| Memory Type: | Non-Volatile | Memory Format: | FLASH |
|---|---|---|---|
| Technology: | FLASH - NOR | Memory Size: | 256Mbit |
| Memory Organization: | 16M X 16 | Memory Interface: | Parallel |
| Clock Frequency: | 66 MHz | Write Cycle Time - Word, Page: | 60ns |
Product Description
S29WS256P0PBFW000 Temperature Sensor Chip Ic Flash 256mbit Parallel 84fbga
FLASH - NOR Memory IC 256Mbit Parallel 66 MHz 80 ns 84-FBGA (11.6x8)
Specifications of S29WS256P0PBFW000
| TYPE | DESCRIPTION |
| Category | Integrated Circuits (ICs) |
| Memory | |
| Memory | |
| Mfr | Infineon Technologies |
| Series | WS-P |
| Package | Tray |
| Product Status | Discontinued at Digi-Key |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NOR |
| Memory Size | 256Mbit |
| Memory Organization | 16M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 66 MHz |
| Write Cycle Time - Word, Page | 60ns |
| Access Time | 80 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -25°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 84-VFBGA |
| Supplier Device Package | 84-FBGA (11.6x8) |
| Base Product Number | S29WS256 |
Features of S29WS256P0PBFW000
• Single 1.8 V read/program/erase (1.70–1.95 V)
• 90 nm MirrorBit™ Technology
• Simultaneous Read/Write operation with zero latency
• Random page read access mode of 8 words with 20ns intra page access time
• 32 Word / 64 Byte Write Buffer
• Sixteen-bank architecture consisting of 32/16/8 Mwords for 512/256/128P, respectively
• Four 16 Kword sectors at both top and bottom of memory array
• 510/254/126 64Kword sectors (WS512/256/128P)
• Programmable linear (8/16/32) with or without wrap around and continuous burst read modes
• Secured Silicon Sector region consisting of 128 words each for factory and 128 words for customer
• 20-year data retention (typical)
• Cycling Endurance: 100,000 cycles per sector(typical)
• Command set compatible with JEDEC (42.4) standard
• Hardware (WP#) protection of top and bottom sectors
• Dual boot sector configuration (top and bottom)
• Handshaking by monitoring RDY
• Offered Packages
– WS512P/WS256P/WS128P: 84-ball FBGA (11.6 mm x 8 mm)
• Low VCC write inhibit
• Persistent and Password methods of Advanced Sector Protection
• Write operation status bits indicate program and erase operation completion
• Suspend and Resume commands for Program and Erase operations
• Unlock Bypass program command to reduce programming time
• Synchronous or Asynchronous program operation, independent of burst control register settings
• ACC input pin to reduce factory programming time
• Support for Common Flash Interface (CFI)
Applications of S29WS256P0PBFW000
• Using the Operation Status Bits in AMD Devices
• Understanding Burst Mode Flash Memory Devices
• Simultaneous Read/Write vs. Erase Suspend/Resume
• MirrorBit® Flash Memory Write Buffer Programming and Page Buffer Read
• Design-In Scalable Wireless Solutions with Cypress Products
• Common Flash Interface Version 1.4 Vendor Specific Extensions
Environmental & Export Classifications of S29WS256P0PBFW000
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B1A |
| HTSUS | 8542.32.0071 |
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