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CY62157ELL-45ZSXIT Temperature Sensor Chip Ic Sram 8mbit Parallel 44tsop Ii
Product Details:
| Place of Origin: | original |
| Brand Name: | original |
| Certification: | original |
| Model Number: | CY62157ELL-45ZSXIT |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1 |
|---|---|
| Price: | negotiation |
| Packaging Details: | carton box |
| Delivery Time: | 1-3working days |
| Payment Terms: | T/T, L/C |
| Supply Ability: | 100,000 |
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Detail Information |
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| Product Status: | Active | Memory Type: | Volatile |
|---|---|---|---|
| Memory Format: | SRAM | Technology: | SRAM - Asynchronous |
| Memory Size: | 8Mbit | Memory Organization: | 512K X 16 |
| Memory Interface: | Parallel | Write Cycle Time - Word, Page: | 45ns |
Product Description
CY62157ELL-45ZSXIT Temperature Sensor Chip Ic Sram 8mbit Parallel 44tsop Ii
SRAM - Asynchronous Memory IC 8Mbit Parallel 45 ns 44-TSOP II
Specifications of CY62157ELL-45ZSXIT
| TYPE | DESCRIPTION |
| Category | Integrated Circuits (ICs) |
| Memory | |
| Memory | |
| Mfr | Infineon Technologies |
| Series | MoBL® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 8Mbit |
| Memory Organization | 512K x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 45ns |
| Access Time | 45 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 44-TSOP (0.400", 10.16mm Width) |
| Supplier Device Package | 44-TSOP II |
| Base Product Number | CY62157 |
Features of CY62157ELL-45ZSXIT
■ Very high speed: 45 ns
- Industrial: –40 °C to +85 °C
- Automotive-E: –40 °C to +125 °C
■ Wide voltage range: 4.5 V–5.5 V
■ Ultra low standby power
- Typical standby current: 2 A
- Maximum standby current: 8 A (Industrial)
■ Ultra low active power
- Typical active current: 1.8 mA at f = 1 MHz
■ Ultra low standby power
■ Easy memory expansion with CE1, CE2 and OE features
■ Automatic power down when deselected
■ CMOS for optimum speed and power
■ Available in Pb-free 44-pin TSOP II and 48-ball VFBGA package
Applications of CY62157ELL-45ZSXIT
The CY62157E is a high performance CMOS static RAM organized as 512K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Place the device into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input or output pins (I/O0 through I/O15) are placed in a high impedance state when:
■ Deselected (CE1HIGH or CE2 LOW)
■ Outputs are disabled (OE HIGH)
■ Both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH)
■ Write operation is active (CE1 LOW, CE2 HIGH and WE LOW)
Environmental & Export Classifications of CY62157ELL-45ZSXIT
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
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