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FM25H20-DG Temperature Sensor Chip Ic Fram 2mbit Spi 40mhz 8dfn
Product Details:
| Place of Origin: | original |
| Brand Name: | original |
| Certification: | original |
| Model Number: | FM25H20-DG |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1 |
|---|---|
| Price: | negotiation |
| Packaging Details: | carton box |
| Delivery Time: | 1-3working days |
| Payment Terms: | T/T, L/C |
| Supply Ability: | 100,000 |
|
Detail Information |
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| Package: | Tube | Product Status: | Obsolete |
|---|---|---|---|
| Memory Type: | Non-Volatile | Memory Format: | FRAM |
| Technology: | FRAM (Ferroelectric RAM) | Memory Size: | 2Mbit |
| Memory Organization: | 256K X 8 | Memory Interface: | SPI |
Product Description
FM25H20-DG Temperature Sensor Chip Ic Fram 2mbit Spi 40mhz 8dfn
FRAM (Ferroelectric RAM) Memory IC 2Mbit SPI 40 MHz 8-DFN (5x6)
Specifications of FM25H20-DG
| TYPE | DESCRIPTION |
| Category | Integrated Circuits (ICs) |
| Memory | |
| Memory | |
| Mfr | Infineon Technologies |
| Series | F-RAM™ |
| Package | Tube |
| Product Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | FRAM |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Size | 2Mbit |
| Memory Organization | 256K x 8 |
| Memory Interface | SPI |
| Clock Frequency | 40 MHz |
| Write Cycle Time - Word, Page | - |
| Voltage - Supply | 2.7V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-WDFN Exposed Pad |
| Supplier Device Package | 8-DFN (5x6) |
| Base Product Number | FM25H20 |
Features of FM25H20-DG
■ 2-Mbit ferroelectric random access memory (F-RAM) logically organized as 256 K × 8
- High-endurance 100 trillion (1014) read/writes
- 151-year data retention (See the Data Retention and Endurance table)
- NoDelay™ writes
- Advanced high-reliability ferroelectric process
■ Very fast serial peripheral interface (SPI)
- Up to 40-MHz frequency
- Direct hardware replacement for serial flash andEEPROM
- Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
■ Sophisticated write protection scheme
- Hardware protection using the Write Protect (WP)pin
- Software protection using Write Disable instruction
- Software block protection for 1/4, 1/2, or entire array
■ Low power consumption
- 1 mA active current at 1 MHz
- 80 nA (typ) standby current
- 3 nA sleep mode current
■ Low-voltage operation: VDD = 2.7 V to 3.6 V
■ Industrial temperature –40 C to +85 C
■ Packages
- 8-pin small outline integrated circuit (SOIC) package
- 8-pin thin dual flat no leads (TDFN) package
■ Restriction of hazardous substances (RoHS) compliant
Applications of FM25H20-DG
The FM25H20 is a 2-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.
Environmental & Export Classifications of FM25H20-DG
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8542.32.0071 |
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