• STL285N4F7AG N-Channel 40 V 120A (Tc) 188W (Tc) Surface Mount PowerFlat™ (5x6)
STL285N4F7AG N-Channel 40 V 120A (Tc) 188W (Tc) Surface Mount PowerFlat™ (5x6)

STL285N4F7AG N-Channel 40 V 120A (Tc) 188W (Tc) Surface Mount PowerFlat™ (5x6)

Product Details:

Place of Origin: original
Brand Name: original
Certification: original
Model Number: STL285N4F7AG

Payment & Shipping Terms:

Minimum Order Quantity: 1
Price: negotiation
Packaging Details: carton box
Delivery Time: 1-3working days
Payment Terms: T/T
Supply Ability: 100,000
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Detail Information

FET Type: N-Channel Technology: MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.1mOhm @ 24A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67 NC @ 10 V

Product Description

STL285N4F7AG N-Channel 40 V 120A (Tc) 188W (Tc) Surface Mount PowerFlat™ (5x6)​
 

Specifications of STL285N4F7AG

 

TYPE DESCRIPTION
Category Discrete Semiconductor Products
  Transistors
  FETs, MOSFETs
  Single FETs, MOSFETs
Mfr STMicroelectronics
Series STripFET™ F7
Package Tape & Reel (TR)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.1mOhm @ 24A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 67 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 5600 pF @ 25 V
FET Feature -
Power Dissipation (Max) 188W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerFlat™ (5x6)
Package / Case 8-PowerVDFN
Base Product Number STL285


Environmental & Export Classifications of STL285N4F7AG

 

ATTRIBUTE DESCRIPTION  
RoHS Status ROHS3 Compliant  
Moisture Sensitivity Level (MSL) 1 (Unlimited)  
REACH Status REACH Unaffected  
ECCN EAR99  
HTSUS 8541.29.0095  

 


 
 
 

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