• IPD80R900P7ATMA1 Electronic IC Chips MOSFET IC N CH 800V 6A TO252-3
IPD80R900P7ATMA1 Electronic IC Chips MOSFET IC N CH 800V 6A TO252-3

IPD80R900P7ATMA1 Electronic IC Chips MOSFET IC N CH 800V 6A TO252-3

Product Details:

Place of Origin: original
Brand Name: original
Certification: original
Model Number: IPD80R900P7ATMA1

Payment & Shipping Terms:

Minimum Order Quantity: 1
Price: negotiation
Packaging Details: carton box
Delivery Time: 1-3working days
Payment Terms: T/T, L/C
Supply Ability: 100,000
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Detail Information

Input Capacitance (Ciss) (Max) @ Vds: 350 PF @ 500 V FET Feature: -
Power Dissipation (Max): 45W (Tc) Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Base Product Number: IPD80R900
High Light:

IPD80R900P7ATMA1

,

MOSFET IC N CH 800V 6A

,

MOSFET IC 800V 6A TO252-3

Product Description

IPD60N10S4L-12 WIRELESS RF MODULE MOSFET N-CH 100V 60A TO252-3

Ipd80r900p7atma1 Wireless Rf Module Mosfet N-Ch 800v 6a To252-3

N-Channel 800 V 6A (Tc) 45W (Tc) Surface Mount PG-TO252-3

 

Specifications of IPD80R900P7ATMA1

 

TYPE DESCRIPTION
Category Discrete Semiconductor Products
Transistors
FETs, MOSFETs
Single FETs, MOSFETs
Mfr Infineon Technologies
Series CoolMOS™ P7
Package Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 900mOhm @ 2.2A, 10V
Vgs(th) (Max) @ Id 3.5V @ 110µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 500 V
FET Feature -
Power Dissipation (Max) 45W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IPD80R900

 

Features of IPD80R900P7ATMA1

 

•Best-in-classFOMRDS(on)*Eoss;reducedQg,Ciss,andCoss
•Best-in-classDPAKRDS(on)
•Best-in-classV(GS)thof3VandsmallestV(GS)thvariationof±0.5V
•IntegratedZenerDiodeESDprotection
•Fullyoptimizedportfolio
 

Applications of IPD80R900P7ATMA1

 

•Best-in-classperformance
•Enablinghigherpowerdensitydesigns,BOMsavingsandlower assemblycosts
•Easytodriveandtoparallel
BetterproductionyieldbyreducingESDrelatedfailures
•Lessproductionissuesandreducedfieldreturns
•Easytoselectrightpartsforfinetuningofdesigns

 

 

Environmental & Export Classifications of IPD80R900P7ATMA1

 

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095

 

IPD80R900P7ATMA1 Electronic IC Chips MOSFET IC N CH 800V 6A TO252-3 0

 

 

 

 



 

 

 

 

 

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