• SI4825DDY-T1-GE3 P-Channel 30 V 14.9A  2.7W 5W (Tc) Surface Mount 8-SOIC
SI4825DDY-T1-GE3 P-Channel 30 V 14.9A  2.7W 5W (Tc) Surface Mount 8-SOIC

SI4825DDY-T1-GE3 P-Channel 30 V 14.9A 2.7W 5W (Tc) Surface Mount 8-SOIC

Product Details:

Place of Origin: original
Brand Name: original
Certification: original
Model Number: SI4825DDY-T1-GE3

Payment & Shipping Terms:

Minimum Order Quantity: 1
Price: negotiation
Packaging Details: carton box
Delivery Time: 1-3working days
Payment Terms: T/T
Supply Ability: 100,000
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Detail Information

FET Type: P-Channel Technology: MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss): 30 V Current - Continuous Drain (Id) @ 25°C: 14.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86 NC @ 10 V

Product Description

SI4825DDY-T1-GE3 P-Channel 30 V 14.9A 2.7W 5W (Tc) Surface Mount 8-SOIC
 
Specifications of SI4825DDY-T1-GE3

 

TYPE DESCRIPTION
Category Discrete Semiconductor Products
  Transistors
  FETs, MOSFETs
  Single FETs, MOSFETs
Mfr Vishay Siliconix
Series TrenchFET®
Package Tape & Reel (TR)
  Cut Tape (CT)
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 14.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 12.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 86 nC @ 10 V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2550 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.7W (Ta), 5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Base Product Number SI4825

 


Environmental & Export Classifications of SI4825DDY-T1-GE3

 

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095

 


 

 

 

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