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SBRA8160T3G Diode Electronic Components 60 V 1A Surface Mount SMA
Product Details:
| Place of Origin: | original |
| Brand Name: | original |
| Certification: | original |
| Model Number: | SBRA8160T3G |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1 |
|---|---|
| Price: | negotiation |
| Packaging Details: | carton box |
| Delivery Time: | 1-3working days |
| Payment Terms: | T/T |
| Supply Ability: | 100,000 |
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Detail Information |
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| Voltage - DC Reverse (Vr) (Max): | 60 V | Current - Average Rectified (Io): | 1A |
|---|---|---|---|
| Voltage - Forward (Vf) (Max) @ If: | 720 MV @ 1 A | Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 200 µA @ 60 V | Package / Case: | DO-214AC, SMA |
| High Light: | Diode Electronic Components,Surface Mount Electronic Components,SBRA8160T3G |
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Product Description
SBRA8160T3G Diode Electronic Components 60 V 1A Surface Mount SMA
Specifications of SBRA8160T3G
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Products |
| Diodes | |
| Rectifiers | |
| Single Diodes | |
| Mfr | onsemi |
| Series | - |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 60 V |
| Current - Average Rectified (Io) | 1A |
| Voltage - Forward (Vf) (Max) @ If | 720 mV @ 1 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 200 µA @ 60 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | DO-214AC, SMA |
| Supplier Device Package | SMA |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Base Product Number | SBRA81 |
Specifications of SBRA8160T3G
• Small Compact Surface Mountable Package with J−Bent Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• Very Low Forward Voltage Drop
• Guardring for Stress Protection
• SBRA8 Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable*
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Specifications of SBRA8160T3G
These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity diodes in surface mount applications where compact size and weight are critical to the system.
Environmental & Export Classifications of SBRA8160T3G
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
