• RSR010N10TL N-Channel MOSFET 100 V 1A (Ta) 540mW (Ta) Surface Mount TSMT3
RSR010N10TL N-Channel MOSFET 100 V 1A (Ta) 540mW (Ta) Surface Mount TSMT3

RSR010N10TL N-Channel MOSFET 100 V 1A (Ta) 540mW (Ta) Surface Mount TSMT3

Product Details:

Place of Origin: original
Brand Name: original
Certification: original
Model Number: RSR010N10TL

Payment & Shipping Terms:

Minimum Order Quantity: 1
Price: negotiation
Packaging Details: carton box
Delivery Time: 1-3working days
Payment Terms: T/T
Supply Ability: 100,000
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Detail Information

FET Type: N-Channel Drain To Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Rds On (Max) @ Id, Vgs: 520mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 3.5 NC @ 5 V Vgs (Max): ±20V
High Light:

RSR010N10TL N-Channel MOSFET

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Surface Mount N-Channel MOSFET

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RSR010N10TL

Product Description

RSB16VTE-17 Clamp Ipp Tvs Diode Surface Mount UMD2 Electronic Components
 
Specifications of RSR010N10TL

 

TYPE DESCRIPTION
Category Discrete Semiconductor Products
  Transistors
  FETs, MOSFETs
  Single FETs, MOSFETs
Mfr Rohm Semiconductor
Series -
Package Tape & Reel (TR)
  Cut Tape (CT)
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 1A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
Rds On (Max) @ Id, Vgs 520mOhm @ 1A, 10V
Vgs(th) (Max) @ Id 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 3.5 nC @ 5 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 25 V
FET Feature -
Power Dissipation (Max) 540mW (Ta)
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package TSMT3
Package / Case SC-96
Base Product Number RSR010

 


Environmental & Export Classifications of RSR010N10TL

 

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095

 


 

 

 

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