• NSVT45010MW6T1G Bipolar Transistor Array 2 PNP (Dual) 45V 100mA 100MHz 380mW
NSVT45010MW6T1G Bipolar Transistor Array 2 PNP (Dual) 45V 100mA 100MHz 380mW

NSVT45010MW6T1G Bipolar Transistor Array 2 PNP (Dual) 45V 100mA 100MHz 380mW

Product Details:

Place of Origin: original
Brand Name: original
Certification: original
Model Number: NSVT45010MW6T1G

Payment & Shipping Terms:

Minimum Order Quantity: 1
Price: negotiation
Packaging Details: carton box
Delivery Time: 1-3working days
Payment Terms: T/T
Supply Ability: 100,000
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Detail Information

Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Power - Max: 380mW Frequency - Transition: 100MHz
High Light:

NSVT45010MW6T1G

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NSVT45010MW6T1G Bipolar Transistor Array

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2 PNP Bipolar Transistor Array

Product Description

NSVT45010MW6T1G Bipolar Transistor Array 2 PNP (Dual) 45V 100mA 100MHz 380mW
 
Specifications of NSVT45010MW6T1G

 

TYPE DESCRIPTION
Category Discrete Semiconductor Products
  Transistors
  Bipolar (BJT)
  Bipolar Transistor Arrays
Mfr onsemi
Series -
Package Tape & Reel (TR)
  Cut Tape (CT)
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 45V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 220 @ 2mA, 5V
Power - Max 380mW
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number NSVT45010

 

Features of NSVT45010MW6T1G


• Current Gain Matching to 10%
• Base−Emitter Voltage Matched to ≤ 2 mV
• Drop−In Replacement for Standard Device
• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

 

 

Descriptions of NSVT45010MW6T1G


These transistors are housed in an ultra−small SOT−363 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense and Balanced Amplifiers; Mixers; Detectors and Limiters. Complementary NPN equivalent NST45011MW6T1G is available.

 

 


Environmental & Export Classifications of NSVT45010MW6T1G

 

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075

 
NSVT45010MW6T1G Bipolar Transistor Array 2 PNP (Dual) 45V 100mA 100MHz 380mW 0


 

 

 

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