NSVT45010MW6T1G Bipolar Transistor Array 2 PNP (Dual) 45V 100mA 100MHz 380mW
Product Details:
Place of Origin: | original |
Brand Name: | original |
Certification: | original |
Model Number: | NSVT45010MW6T1G |
Payment & Shipping Terms:
Minimum Order Quantity: | 1 |
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Price: | negotiation |
Packaging Details: | carton box |
Delivery Time: | 1-3working days |
Payment Terms: | T/T |
Supply Ability: | 100,000 |
Detail Information |
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Transistor Type: | 2 PNP (Dual) | Current - Collector (Ic) (Max): | 100mA |
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Voltage - Collector Emitter Breakdown (Max): | 45V | Vce Saturation (Max) @ Ib, Ic: | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max): | 15nA (ICBO) | DC Current Gain (hFE) (Min) @ Ic, Vce: | 220 @ 2mA, 5V |
Power - Max: | 380mW | Frequency - Transition: | 100MHz |
High Light: | NSVT45010MW6T1G,NSVT45010MW6T1G Bipolar Transistor Array,2 PNP Bipolar Transistor Array |
Product Description
NSVT45010MW6T1G Bipolar Transistor Array 2 PNP (Dual) 45V 100mA 100MHz 380mW
Specifications of NSVT45010MW6T1G
TYPE | DESCRIPTION |
Category | Discrete Semiconductor Products |
Transistors | |
Bipolar (BJT) | |
Bipolar Transistor Arrays | |
Mfr | onsemi |
Series | - |
Package | Tape & Reel (TR) |
Cut Tape (CT) | |
Transistor Type | 2 PNP (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 45V |
Vce Saturation (Max) @ Ib, Ic | 650mV @ 5mA, 100mA |
Current - Collector Cutoff (Max) | 15nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 220 @ 2mA, 5V |
Power - Max | 380mW |
Frequency - Transition | 100MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |
Base Product Number | NSVT45010 |
Features of NSVT45010MW6T1G
• Current Gain Matching to 10%
• Base−Emitter Voltage Matched to ≤ 2 mV
• Drop−In Replacement for Standard Device
• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Descriptions of NSVT45010MW6T1G
These transistors are housed in an ultra−small SOT−363 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need for costly trimming. Applications are Current Mirrors; Differential, Sense and Balanced Amplifiers; Mixers; Detectors and Limiters. Complementary NPN equivalent NST45011MW6T1G is available.
Environmental & Export Classifications of NSVT45010MW6T1G
ATTRIBUTE | DESCRIPTION |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.21.0075 |