MSA1162GT1G Bipolar (BJT) Transistor PNP 50 V 100 mA 80MHz 200 mW SC-59
Product Details:
Place of Origin: | original |
Brand Name: | original |
Certification: | original |
Model Number: | MSA1162GT1G |
Payment & Shipping Terms:
Minimum Order Quantity: | 1 |
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Price: | negotiation |
Packaging Details: | carton box |
Delivery Time: | 1-3working days |
Payment Terms: | T/T |
Supply Ability: | 100,000 |
Detail Information |
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Transistor Type: | PNP | Current - Collector (Ic) (Max): | 100 MA |
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Voltage - Collector Emitter Breakdown (Max): | 50 V | Vce Saturation (Max) @ Ib, Ic: | 500mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100nA | DC Current Gain (hFE) (Min) @ Ic, Vce: | 200 @ 2mA, 6V |
Power - Max: | 200 MW | Frequency - Transition: | 80MHz |
Product Description
MSA1162GT1G Bipolar (BJT) Transistor PNP 50 V 100 mA 80MHz 200 mW SC-59
Specifications of MSA1162GT1G
TYPE | DESCRIPTION |
Category | Discrete Semiconductor Products |
Transistors | |
Bipolar (BJT) | |
Single Bipolar Transistors | |
Mfr | onsemi |
Series | - |
Package | Tape & Reel (TR) |
Cut Tape (CT) | |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 100 mA |
Voltage - Collector Emitter Breakdown (Max) | 50 V |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
Current - Collector Cutoff (Max) | 100nA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
Power - Max | 200 mW |
Frequency - Transition | 80MHz |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SC-59 |
Base Product Number | MSA1162 |
Features of MSA1162GT1G
• Moisture Sensitivity Level: 1
• This is a Pb−Free Device
Environmental & Export Classifications of MSA1162GT1G
ATTRIBUTE | DESCRIPTION |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.21.0095 |
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