• MSA1162GT1G Bipolar (BJT) Transistor PNP 50 V 100 mA 80MHz 200 mW SC-59
MSA1162GT1G Bipolar (BJT) Transistor PNP 50 V 100 mA 80MHz 200 mW SC-59

MSA1162GT1G Bipolar (BJT) Transistor PNP 50 V 100 mA 80MHz 200 mW SC-59

Product Details:

Place of Origin: original
Brand Name: original
Certification: original
Model Number: MSA1162GT1G

Payment & Shipping Terms:

Minimum Order Quantity: 1
Price: negotiation
Packaging Details: carton box
Delivery Time: 1-3working days
Payment Terms: T/T
Supply Ability: 100,000
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Detail Information

Transistor Type: PNP Current - Collector (Ic) (Max): 100 MA
Voltage - Collector Emitter Breakdown (Max): 50 V Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Power - Max: 200 MW Frequency - Transition: 80MHz

Product Description

MSA1162GT1G Bipolar (BJT) Transistor PNP 50 V 100 mA 80MHz 200 mW SC-59
 
Specifications of MSA1162GT1G

 

TYPE DESCRIPTION
Category Discrete Semiconductor Products
  Transistors
  Bipolar (BJT)
  Single Bipolar Transistors
Mfr onsemi
Series -
Package Tape & Reel (TR)
  Cut Tape (CT)
Transistor Type PNP
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA, 6V
Power - Max 200 mW
Frequency - Transition 80MHz
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Supplier Device Package SC-59
Base Product Number MSA1162

 

Features of MSA1162GT1G


• Moisture Sensitivity Level: 1
• This is a Pb−Free Device

 

 


Environmental & Export Classifications of MSA1162GT1G
 

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095

 
MSA1162GT1G Bipolar (BJT) Transistor PNP 50 V 100 mA 80MHz 200 mW SC-59 0


 

 

 

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