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IRF6713STRPBF N-Channel 25 V 22A (Ta), 95A (Tc) 2.2W (Ta), 42W (Tc)
Product Details:
| Place of Origin: | original |
| Brand Name: | original |
| Certification: | original |
| Model Number: | IRF6713STRPBF |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1 |
|---|---|
| Price: | negotiation |
| Packaging Details: | carton box |
| Delivery Time: | 1-3working days |
| Payment Terms: | T/T |
| Supply Ability: | 100,000 |
|
Detail Information |
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| Technology: | MOSFET (Metal Oxide) | Rds On (Max) @ Id, Vgs: | 3mOhm @ 22A, 10V |
|---|---|---|---|
| Drain To Source Voltage (Vdss): | 25 V | Current - Continuous Drain (Id) @ 25°C: | 22A (Ta), 95A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V | Gate Charge (Qg) (Max) @ Vgs: | 32 NC @ 4.5 V |
| Vgs(th) (Max) @ Id: | 2.4V @ 50µA | Input Capacitance (Ciss) (Max) @ Vds: | 2880 PF @ 13 V |
Product Description
IRF6713STRPBF N-Channel 25 V 22A (Ta), 95A (Tc) 2.2W (Ta), 42W (Tc)
Specifications of IRF6713STRPBF
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Tape & Reel (TR) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25 V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 95A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 3mOhm @ 22A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 50µA |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 4.5 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2880 pF @ 13 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.2W (Ta), 42W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | DIRECTFET™ SQ |
| Package / Case | DirectFET™ Isometric SQ |
Features of IRF6713STRPBF
RoHS Compliant Containing No Lead and Bromide
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for both Sync.FET and some Control FET application
Low Conduction and Switching Losses
Compatible with existing Surface Mount Techniques
100% Rg tested
Descriptions of IRF6713STRPBF
The IRF6713SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
Environmental & Export Classifications of IRF6713STRPBF
| ATTRIBUTE | DESCRIPTION |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
