• BC858CDXV6T1G BJT Bipolar Transistor Array 2 PNP (Dual) 30V 100mA 100MHz 500mW
BC858CDXV6T1G BJT Bipolar Transistor Array 2 PNP (Dual) 30V 100mA 100MHz 500mW

BC858CDXV6T1G BJT Bipolar Transistor Array 2 PNP (Dual) 30V 100mA 100MHz 500mW

Product Details:

Place of Origin: original
Brand Name: original
Certification: original
Model Number: BC858CDXV6T1G

Payment & Shipping Terms:

Minimum Order Quantity: 1
Price: negotiation
Packaging Details: carton box
Delivery Time: 1-3working days
Payment Terms: T/T
Supply Ability: 100,000
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Detail Information

Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 100 MA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Current - Collector Cutoff (Max): 15nA (ICBO)
Voltage - Collector Emitter Breakdown (Max): 30 V Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Power - Max: 500mW Frequency - Transition: 100MHz
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BC858CDXV6T1G

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BC858CDXV6T1G BJT Bipolar Transistor

Product Description

BC858CDXV6T1G Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 100mA 100MHz 500mW​

 

Specifications of BC858CDXV6T1G

 

TYPE DESCRIPTION
Category Discrete Semiconductor Products
  Transistors
  Bipolar (BJT)
  Bipolar Transistor Arrays
Mfr onsemi
Series -
Package Tape & Reel (TR)
  Cut Tape (CT)
Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 30V
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA, 5V
Power - Max 500mW
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case SOT-563, SOT-666
Supplier Device Package SOT-563
Base Product Number BC858

 
Features of BC858CDXV6T1G

 

These are Pb−Free Devices

 

 

 

Environmental & Export Classifications of BC858CDXV6T1G

 

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0075

 

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