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BAV21WS-HE3-18 Diode 200 V 250mA Surface Mount SOD-323
Product Details:
| Place of Origin: | original |
| Brand Name: | original |
| Certification: | original |
| Model Number: | BAV21WS-HE3-18 |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1 |
|---|---|
| Price: | negotiation |
| Packaging Details: | carton box |
| Delivery Time: | 1-3working days |
| Payment Terms: | T/T |
| Supply Ability: | 100,000 |
|
Detail Information |
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| Technology: | Standard | Voltage - DC Reverse (Vr) (Max): | 200 V |
|---|---|---|---|
| Current - Average Rectified (Io): | 250mA | Voltage - Forward (Vf) (Max) @ If: | 1.25 V @ 200 MA |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) | Reverse Recovery Time (trr): | 50 Ns |
| Current - Reverse Leakage @ Vr: | 100 NA @ 200 V | Capacitance @ Vr, F: | 1.5pF @ 0V, 1MHz |
Product Description
AT91SAM7X512B-AU ARM7® SAM7X Microcontroller IC 16/32-Bit 55MHz 512KB FLASH
Specifications of BAV21WS-HE3-18
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Products |
| Diodes | |
| Rectifiers | |
| Single Diodes | |
| Mfr | Vishay General Semiconductor - Diodes Division |
| Series | Automotive, AEC-Q101 |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Current - Average Rectified (Io) | 250mA |
| Voltage - Forward (Vf) (Max) @ If | 1.25 V @ 200 mA |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 50 ns |
| Current - Reverse Leakage @ Vr | 100 nA @ 200 V |
| Capacitance @ Vr, F | 1.5pF @ 0V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | SC-76, SOD-323 |
| Supplier Device Package | SOD-323 |
| Operating Temperature - Junction | 150°C (Max) |
| Base Product Number | BAV21 |
Features of BAV21WS-HE3-18
* Incorporates the ARM7TDMI ARM Thumb® Processor
- High-performance 32-bit RISC Architecture
- High-density 16-bit Instruction Set
- Leader in MIPS/Watt
- EmbeddedICE™ In-circuit Emulation, Debug Communication Channel Support
* Internal High-speed Flash
- 512 Kbytes (SAM7X512) Organized in Two Banks of 1024 Pages of 256 Bytes (Dual Plane)
- 256 Kbytes (SAM7X256) Organized in 1024 Pages of 256 Bytes (Single Plane)
- 128 Kbytes (SAM7X128) Organized in 512 Pages of 256 Bytes (Single Plane)
- Single Cycle Access at Up to 30 MHz in Worst Case Conditions
- Prefetch Buffer Optimizing Thumb Instruction Execution at Maximum Speed
- Page Programming Time: 6 ms, Including Page Auto-erase,Full Erase Time: 15 ms
- 10,000 Write Cycles, 10-year Data Retention Capability,Sector Lock Capabilities, Flash Security Bit
- Fast Flash Programming Interface for High Volume Production
* Internal High-speed SRAM, Single-cycle Access at Maximum Speed
- 128 Kbytes (SAM7X512)
- 64 Kbytes (SAM7X256)
- 32 Kbytes (SAM7X128)
Applications of BAV21WS-HE3-18
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes / options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
Environmental & Export Classifications of BAV21WS-HE3-18
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.10.0070 |
