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MBRAF360T3G Electronic Components Diode 60 V 4A Surface Mount SMA-FL
Product Details:
| Place of Origin: | original |
| Brand Name: | original |
| Certification: | original |
| Model Number: | MBRAF360T3G |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1 |
|---|---|
| Price: | negotiation |
| Packaging Details: | carton box |
| Delivery Time: | 3-5ddays |
| Payment Terms: | T/T |
| Supply Ability: | 1000 |
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Detail Information |
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| Voltage - DC Reverse (Vr) (Max): | 60 V | Current - Average Rectified (Io): | 4A |
|---|---|---|---|
| Voltage - Forward (Vf) (Max) @ If: | 630 MV @ 3 A | Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr: | 3 MA @ 60 V | Capacitance @ Vr, F: | - |
| Operating Temperature - Junction: | -65°C ~ 150°C | ||
Product Description
MBRAF360T3G Electronic Components Diode 60 V 4A Surface Mount SMA-FL
Specifications of MBRAF360T3G
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Products |
| Diodes | |
| Rectifiers | |
| Single Diodes | |
| Mfr | onsemi |
| Series | - |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) | 60 V |
| Current - Average Rectified (Io) | 4A |
| Voltage - Forward (Vf) (Max) @ If | 630 mV @ 3 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 3 mA @ 60 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Surface Mount |
| Package / Case | DO-221AC, SMA Flat Leads |
| Supplier Device Package | SMA-FL |
| Operating Temperature - Junction | -65°C ~ 150°C |
| Base Product Number | MBRAF360 |
Features of MBRAF360T3G
• Low Profile Package for Space Constrained Applications
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• 150°C Operating Junction Temperature
• Guard−Ring for Stress Protection
• NRVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
• These are Pb−Free and Halide−Free Devices
Applications of MBRAF360T3G
This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode.
Environmental & Export Classifications of MBRAF360T3G
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
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