 |
SIR662DP-T1-GE3 N-Channel MOSFETs 60 V 60A (Tc) 6.25W (Ta)/104W (Tc)
Product Details:
| Place of Origin: | original |
| Brand Name: | original |
| Certification: | original |
| Model Number: | LP2950CDT-5.0/NOPB |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1 |
|---|---|
| Price: | negotiation |
| Packaging Details: | carton box |
| Delivery Time: | 3-5ddays |
| Payment Terms: | T/T |
| Supply Ability: | 1000 |
|
Detail Information |
|||
| FET Type: | N-Channel | Drain To Source Voltage (Vdss): | 60 V |
|---|---|---|---|
| Current - Continuous Drain (Id) @ 25°C: | 60A (Tc) | Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs: | 2.7mOhm @ 20A, 10V | Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 96 NC @ 10 V | Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 4365 PF @ 30 V | Power Dissipation (Max): | 6.25W (Ta), 104W (Tc) |
| High Light: | SIR662DP-T1-GE3,N-Channel MOSFETs 60 V |
||
Product Description
SIR662DP-T1-GE3 N-Channel MOSFETs 60 V 60A (Tc) 6.25W (Ta), 104W (Tc)
MOSFET N-CH 60V 60A PPAK SO-8 Surface Mount PowerPAK® SO-8
Specifications of SIR662DP-T1-GE3
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Products |
| Single FETs, MOSFETs | |
| Mfr | Vishay Siliconix |
| Series | TrenchFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 2.7mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 96 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4365 pF @ 30 V |
| FET Feature | - |
| Power Dissipation (Max) | 6.25W (Ta), 104W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PowerPAK® SO-8 |
| Package / Case | PowerPAK® SO-8 |
| Base Product Number | SIR662 |
Features of SIR662DP-T1-GE3
• TrenchFET® power MOSFET
• 100 % Rg and UIS tested
• Low Qg for high efficiency
Applications of SIR662DP-T1-GE3
• Primary side switch
• POL
• Synchronous rectifier
• DC/DC converter
• Amusement system
• Industrial
• LED backlighting
Environmental & Export Classifications of SIR662DP-T1-GE3
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
Want to Know more details about this product