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IRFR3710ZTRPBF Electronic Components N-Channel MOSFET 100 V 42A (Tc) 140W (Tc) D-Pak
Product Details:
| Place of Origin: | original |
| Brand Name: | original |
| Certification: | original |
| Model Number: | IRFR3710ZTRPBF |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1 |
|---|---|
| Price: | negotiation |
| Packaging Details: | carton box |
| Delivery Time: | 3-5ddays |
| Payment Terms: | T/T |
| Supply Ability: | 1000 |
|
Detail Information |
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| FET Type: | N-Channel | Technology: | MOSFET (Metal Oxide) |
|---|---|---|---|
| Drain To Source Voltage (Vdss): | 100 V | Current - Continuous Drain (Id) @ 25°C: | 42A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V | Rds On (Max) @ Id, Vgs: | 18mOhm @ 33A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs: | 100 NC @ 10 V |
| Vgs (Max): | ±20V | Input Capacitance (Ciss) (Max) @ Vds: | 2930 PF @ 25 V |
| High Light: | IRFR3710ZTRPBF,IRFR3710ZTRPBF Electronic Components,100 V 42A N-Channel MOSFET |
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Product Description
IRFR3710ZTRPBF Electronic Components N-Channel 100 V 42A (Tc) 140W (Tc) D-Pak
MOSFET N-CH 100V 42A DPAK
Specifications of IRFR3710ZTRPBF
| TYPE | DESCRIPTION |
| Category | Single FETs, MOSFETs |
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 33A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2930 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 140W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D-Pak |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Base Product Number | IRFR3710 |
Features of IRFR3710ZTRPBF
* Advanced Process Technology
* Ultra Low On-Resistance
* 175°C Operating Temperature
* Fast Switching
* Repetitive Avalanche Allowed up to Tjmax
* Multiple Package Options
* Lead-Free
Applications of IRFR3710ZTRPBF
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
Environmental & Export Classifications of IRFR3710ZTRPBF
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
