• IRLML5103TRPBF Electronic Components MOSFET P-Channel 30 V 760mA 540mW
IRLML5103TRPBF Electronic Components MOSFET P-Channel 30 V 760mA 540mW

IRLML5103TRPBF Electronic Components MOSFET P-Channel 30 V 760mA 540mW

Product Details:

Place of Origin: original
Brand Name: original
Certification: original
Model Number: IRLML5103TRPBF

Payment & Shipping Terms:

Minimum Order Quantity: 1
Price: negotiation
Packaging Details: carton box
Delivery Time: 3-5ddays
Payment Terms: T/T
Supply Ability: 1000
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Detail Information

FET Type: P-Channel Drain To Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 760mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 600mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.1 NC @ 10 V Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 75 PF @ 25 V Power Dissipation (Max): 540mW (Ta)

Product Description

IRLML5103TRPBF Electronic Components MOSFET P-Channel 30 V 760mA 540mW
 
MOSFET P-CH 30V 760MA SOT23
 
Specifications of IRLML5103TRPBF

 

TYPE DESCRIPTION
Category Single FETs, MOSFETs
Mfr Infineon Technologies
Series HEXFET®
Package Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 760mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 600mA, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 5.1 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 75 pF @ 25 V
FET Feature -
Power Dissipation (Max) 540mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package Micro3™/SOT-23
Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number IRLML5103

 
Features of IRLML5103TRPBF

 

* Generation V Technology
* UltraLow On-Resistance
* P-ChannelMOSFET
* SOT-23 Footprint
* Low Profile (<1.1mm)
* Available in Tape and Reel
* Fast Switching
* Lead-Free
* RoHS Compliant, Halogen-Free

 


Descriptions of IRLML5103TRPBF


FifthGeneration HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. This benefit.combined with the fast switching speed and ruggedizeddevice design that HEXFET Power MOSFETs are wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.

 


Environmental & Export Classifications of IRLML5103TRPBF

 
ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.21.0095

 

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