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Irf7341trpbf Wireless Rf Module Mosfet 2n-Ch 55v 4.7a 8-Soic
Product Details:
| Place of Origin: | original |
| Brand Name: | original |
| Certification: | original |
| Model Number: | IRF7341TRPBF |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1 |
|---|---|
| Price: | negotiation |
| Packaging Details: | carton box |
| Delivery Time: | 1-3working days |
| Payment Terms: | T/T, L/C |
| Supply Ability: | 100,000 |
|
Detail Information |
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| Gate Charge (Qg) (Max) @ Vgs: | 36nC @ 10V | Input Capacitance (Ciss) (Max) @ Vds: | 740pF @ 25V |
|---|---|---|---|
| Power - Max: | 2W | Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount | Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package: | 8-SO | Base Product Number: | IRF734 |
Product Description
Irf7341trpbf Wireless Rf Module Mosfet 2n-Ch 55v 4.7a 8-Soic
Mosfet Array 55V 4.7A 2W Surface Mount 8-SO
Specifications of IRF7341TRPBF
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| FET, MOSFET Arrays | |
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Digi-Reel® | |
| Product Status | Obsolete |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.7A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 25V |
| Power - Max | 2W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
| Base Product Number | IRF734 |
Features of IRF7341TRPBF
Generation V Technology
Ultra Low On-Resistance
Dual N-Channel Mosfet
Surface Mount
Available in Tape & Reel
Dynamic dv/dt Rating
Fast Switching
Lead-Free
Applications of IRF7341TRPBF
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speedand ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable devicefor use in a wide variety of applications.
Environmental & Export Classifications of IRF7341TRPBF
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
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