• MJF127G Bipolar (BJT) Transistor PNP - Darlington 100 V 5 A 2 W Through Hole
MJF127G Bipolar (BJT) Transistor PNP - Darlington 100 V 5 A 2 W Through Hole

MJF127G Bipolar (BJT) Transistor PNP - Darlington 100 V 5 A 2 W Through Hole

Product Details:

Place of Origin: original
Brand Name: original
Certification: original
Model Number: MJF127G

Payment & Shipping Terms:

Minimum Order Quantity: 1
Price: negotiation
Packaging Details: carton box
Delivery Time: 1-3working days
Payment Terms: T/T
Supply Ability: 100,000
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Detail Information

Transistor Type: PNP - Darlington Current - Collector (Ic) (Max): 0.208333333
Voltage - Collector Emitter Breakdown (Max): 100 V Vce Saturation (Max) @ Ib, Ic: 3.5V @ 20mA, 5A
Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 3V
Power - Max: 2 W Operating Temperature: -65°C ~ 150°C (TJ)

Product Description

MJF127G Bipolar (BJT) Transistor PNP - Darlington 100 V 5 A 2 W Through Hole
 
Specifications of MJF127G

 

TYPE DESCRIPTION
Category Discrete Semiconductor Products
  Transistors
  Bipolar (BJT)
  Single Bipolar Transistors
Mfr onsemi
Series -
Package Tube
Transistor Type PNP - Darlington
Current - Collector (Ic) (Max) 0.208333333
Voltage - Collector Emitter Breakdown (Max) 100 V
Vce Saturation (Max) @ Ib, Ic 3.5V @ 20mA, 5A
Current - Collector Cutoff (Max) 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 3A, 3V
Power - Max 2 W
Frequency - Transition -
Operating Temperature -65°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220FP
Base Product Number MJF127

 
Features of MJF127G


• Electrically Similar to the Popular TIP122 and TIP127
• 100 VCEO(sus)
• 5.0 A Rated Collector Current
• No Isolating Washers Required
• Reduced System Cost
• High DC Current Gain − 2000 (Min) @ IC = 3 Adc
• UL Recognized, File #E69369, to 3500 VRMS Isolation
• Pb−Free Packages are Available*
 
Descriptions of MJF127G

 

Designed for general−purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.

 


Environmental & Export Classifications of MJF127G
 

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095

 
MJF127G Bipolar (BJT) Transistor PNP - Darlington 100 V 5 A 2 W Through Hole 0
 

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