• IS42S16800F-6TL SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 54-TSOP II
IS42S16800F-6TL SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 54-TSOP II

IS42S16800F-6TL SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 54-TSOP II

Product Details:

Place of Origin: original
Brand Name: original
Certification: original
Model Number: IS42S16800F-6TL

Payment & Shipping Terms:

Minimum Order Quantity: 1
Price: negotiation
Packaging Details: carton box
Delivery Time: 1-3working days
Payment Terms: T/T
Supply Ability: 100,000
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Detail Information

Package: Tray Memory Type: Volatile
Memory Format: DRAM Memory Size: 128Mbit
Memory Organization: 8M X 16 Memory Interface: Parallel
Clock Frequency: 166 MHz

Product Description

IS42S16800F-6TL SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 54-TSOP II​
 
Specifications of IS42S16800F-6TL

 

TYPE DESCRIPTION
Category Integrated Circuits (ICs)
  Memory
  Memory
Mfr ISSI, Integrated Silicon Solution Inc
Series -
Package Tray
Memory Type Volatile
Memory Format DRAM
Technology SDRAM
Memory Size 128Mbit
Memory Organization 8M x 16
Memory Interface Parallel
Clock Frequency 166 MHz
Write Cycle Time - Word, Page -
Access Time 5.4 ns
Voltage - Supply 3V ~ 3.6V
Operating Temperature 0°C ~ 70°C (TA)
Mounting Type Surface Mount
Package / Case 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package 54-TSOP II
Base Product Number IS42S16800

 
Features of IS42S16800F-6TL


• Clock frequency: 200, 166, 143 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Power supply Vdd Vddq
-IS42/45S81600F 3.3V 3.3V
-IS42/45S16800F 3.3V 3.3V
• LVTTL interface
• Programmable burst length
– (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Auto Refresh (CBR)
• Self Refresh
• 4096 refresh cycles every 16 ms (A2 grade) or 64 ms (Commercial, Industrial, A1 grade)
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write operations capability
• Burst termination by burst stop and precharge command
• Temperature Ranges:
-Commercial (0o C to +70o C)
-Industrial (-40o C to +85o C)
-Automotive, A1 (-40o C to +85o C)
-Automotive, A2 (-40o C to +105o C)
 
Descriptions of IS42S16800F-6TL

 


The 128Mb SDRAM is a high speed CMOS, dynamic random-access memory designed to operate in 3.3V Vdd and 3.3V Vddq memory systems containing 134,217,728 bits.

 


Environmental & Export Classifications of IS42S16800F-6TL
 

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0002

 
IS42S16800F-6TL SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 54-TSOP II 0
 

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