• TLV9152QDGKRQ1 EMMC Memory Chip OPAMP GP 2 CIRCUIT 8VSSOP
TLV9152QDGKRQ1 EMMC Memory Chip OPAMP GP 2 CIRCUIT 8VSSOP

TLV9152QDGKRQ1 EMMC Memory Chip OPAMP GP 2 CIRCUIT 8VSSOP

Product Details:

Place of Origin: original
Brand Name: original
Certification: original
Model Number: TLV9152QDGKRQ1

Payment & Shipping Terms:

Minimum Order Quantity: 1
Price: negotiation
Packaging Details: carton box
Delivery Time: 1-3working days
Payment Terms: T/T, L/C
Supply Ability: 100,000
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Detail Information

Product Status: Active Amplifier Type: General Purpose
Number Of Circuits: 2 Output Type: Rail-to-Rail
Slew Rate: 20V/µs Gain Bandwidth Product: 4.5 MHz
Current - Input Bias: 10 PA Voltage - Input Offset: 125 µV
High Light:

TLV9152QDGKRQ1

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OPAMP GP 2 CIRCUIT 8VSSOP

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8VSSOP EMMC Memory Chip

Product Description

TLV9152QDGKRQ1 Emmc Memory Chip Ic Opamp Gp 2 Circuit 8vssop
 
General Purpose Amplifier 2 Circuit Rail-to-Rail 8-VSSOP

 

Specifications of TLV9152QDGKRQ1

 

TYPE DESCRIPTION
Category Integrated Circuits (ICs)
Linear
Amplifiers
Instrumentation, OP Amps, Buffer Amps
Mfr Texas Instruments
Series Automotive, AEC-Q100
Package Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Product Status Active
Amplifier Type General Purpose
Number of Circuits 2
Output Type Rail-to-Rail
Slew Rate 20V/µs
Gain Bandwidth Product 4.5 MHz
Current - Input Bias 10 pA
Voltage - Input Offset 125 µV
Current - Supply 560µA (x2 Channels)
Current - Output / Channel 75 mA
Voltage - Supply Span (Min) 2.7 V
Voltage - Supply Span (Max) 16 V
Operating Temperature -40°C ~ 125°C (TA)
Mounting Type Surface Mount
Package / Case 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package 8-VSSOP

 

Features of TLV9152QDGKRQ1

 

• AEC-Q100 qualified for automotive applications
– Temperature grade 1: –40°C to +125°C, TA
– Device HBM ESD classification level 3A
– Device CDM ESD classification level C6
• Low offset voltage: ±125 µV
• Low offset voltage drift: ±0.3 µV/°C
• Low noise: 10.8 nV/√Hz at 1 kHz
• High common-mode rejection: 120 dB
• Low bias current: ±10 pA
• Rail-to-rail input and output
• Wide bandwidth: 4.5-MHz GBW
• High slew rate: 21 V/µs
• Low quiescent current: 560 µA per amplifier
• Wide supply: ±1.35 V to ±8 V, 2.7 V to 16 V
• Robust EMIRR performance: EMI/RFI filters oninput pins
 

Applications of TLV9152QDGKRQ1

 

• Optimized for AEC-Q100 grade 1 applications
• Infotainment and cluster
• Passive safety
• Body electronics and lighting
• HEV/EV inverter and motor control
• On-board (OBC) and wireless charger
• Powertrain current sensor
• Advanced driver assistance systems (ADAS)
• High-side and low-side current sensing

 

Environmental & Export Classifications of TLV9152QDGKRQ1

 

ATTRIBUTE DESCRIPTION
RoHS Status Not applicable
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8542.33.0001

TLV9152QDGKRQ1 EMMC Memory Chip OPAMP GP 2 CIRCUIT 8VSSOP 0

 

 

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