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MT41K128M16JT-125 AAT:K SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 13.75 ns
Product Details:
| Place of Origin: | original |
| Brand Name: | original |
| Certification: | original |
| Model Number: | MT41K128M16JT-125 AAT:K |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1 |
|---|---|
| Price: | negotiation |
| Packaging Details: | carton box |
| Delivery Time: | 1-3working days |
| Payment Terms: | T/T |
| Supply Ability: | 100,000 |
|
Detail Information |
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| Memory Type: | Volatile | Memory Format: | DRAM |
|---|---|---|---|
| Technology: | SDRAM - DDR3L | Memory Size: | 2Gbit |
| Memory Organization: | 128M X 16 | Memory Interface: | Parallel |
| Clock Frequency: | 800 MHz | Access Time: | 13.75 Ns |
Product Description
MT41K128M16JT-125 AAT:K SDRAM - DDR3L Memory IC 2Gbit Parallel 800 MHz 13.75 ns
Specifications of MT41K128M16JT-125 AAT:K
| TYPE | DESCRIPTION |
| Category | Integrated Circuits (ICs) |
| Memory | |
| Memory | |
| Mfr | Micron Technology Inc. |
| Series | Automotive, AEC-Q100 |
| Package | Tray |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 2Gbit |
| Memory Organization | 128M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 800 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 13.75 ns |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 96-TFBGA |
| Supplier Device Package | 96-FBGA (8x14) |
| Base Product Number | MT41K128M16 |
Features of MT41K128M16JT-125 AAT:K
• VDD = VDDQ = 1.35V (1.283–1.45V)
• Backward-compatible to VDD = VDDQ = 1.5V ±0.075V
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Programmable CAS (READ) latency (CL)
• Programmable posted CAS additive latency (AL)
• Programmable CAS (WRITE) latency (CWL)
• Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• Refresh maximum interval time at TC temperature range
– 64ms at –40°C to +85°C
– 32ms at +85°C to +105°C
– 16ms at +105°C to +115°C
– 8ms at +115°C to +125°C
• Self refresh temperature (SRT)
• Automatic self refresh (ASR)
• Write leveling
• Multipurpose register
Descriptions of MT41K128M16JT-125 AAT:K
The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Refer to the DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode.
Environmental & Export Classifications of MT41K128M16JT-125 AAT:K
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8542.32.0036 |
