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FM25L04B-GATR FRAM (Ferroelectric RAM) Memory IC 4Kbit SPI 10 MHz 8-SOIC
Product Details:
| Place of Origin: | original |
| Brand Name: | original |
| Certification: | original |
| Model Number: | FM25L04B-GATR |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1 |
|---|---|
| Price: | negotiation |
| Packaging Details: | carton box |
| Delivery Time: | 1-3working days |
| Payment Terms: | T/T |
| Supply Ability: | 100,000 |
|
Detail Information |
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| Memory Format: | FRAM | Technology: | FRAM (Ferroelectric RAM) |
|---|---|---|---|
| Memory Size: | 4Kbit | Memory Organization: | 512 X 8 |
| Memory Interface: | SPI | Clock Frequency: | 10 MHz |
| Voltage - Supply: | 3V ~ 3.6V | Operating Temperature: | -40°C ~ 125°C (TA) |
Product Description
FM25L04B-GATR FRAM (Ferroelectric RAM) Memory IC 4Kbit SPI 10 MHz 8-SOIC
Specifications of FM25L04B-GATR
| TYPE | DESCRIPTION |
| Category | Integrated Circuits (ICs) |
| Memory | |
| Memory | |
| Mfr | Infineon Technologies |
| Series | Automotive, AEC-Q100, F-RAM™ |
| Package | Tape & Reel (TR) |
| Memory Type | Non-Volatile |
| Memory Format | FRAM |
| Technology | FRAM (Ferroelectric RAM) |
| Memory Size | 4Kbit |
| Memory Organization | 512 x 8 |
| Memory Interface | SPI |
| Clock Frequency | 10 MHz |
| Write Cycle Time - Word, Page | - |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 125°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SOIC |
| Base Product Number | FM25L04 |
Features of FM25L04B-GATR
■ 4-Kbit ferroelectric random access memory (F-RAM) logically organized as 512 × 8
❐ High-endurance 10 trillion (1013) read/writes
❐ 121-year data retention (See the Data Retention and Endurance table)
❐ NoDelay™ writes
❐ Advanced high-reliability ferroelectric process
■ Very fast serial peripheral interface (SPI)
❐ Up to 10 MHz frequency
❐ Direct hardware replacement for serial flash and EEPROM
❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
■ Sophisticated write protection scheme
❐ Hardware protection using the Write Protect (WP) pin
❐ Software protection using Write Disable instruction
❐ Software block protection for 1/4, 1/2, or entire array
■ Low power consumption
❐ 200 A active current at 1 MHz
❐ 6 A (typ) standby current at +85 C
■ Low-voltage operation: VDD = 3.0 V to 3.6 V
■ Automotive-E temperature: –40 C to +125 C
■ 8-pin small outline integrated circuit (SOIC) package
■ AEC Q100 Grade 1 compliant
■ Restriction of hazardous substances (RoHS) compliant
Applications of FM25L04B-GATR
The FM25L04B is a 4-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other nonvolatile memories.
Environmental & Export Classifications of FM25L04B-GATR
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8542.32.0071 |
