• AT28C040-20FI EEPROM Memory IC 4Mbit Parallel 200 Ns 32-FlatPack Bottom-Brazed
AT28C040-20FI EEPROM Memory IC 4Mbit Parallel 200 Ns 32-FlatPack Bottom-Brazed

AT28C040-20FI EEPROM Memory IC 4Mbit Parallel 200 Ns 32-FlatPack Bottom-Brazed

Product Details:

Place of Origin: original
Brand Name: original
Certification: original
Model Number: AT28C040-20FI

Payment & Shipping Terms:

Minimum Order Quantity: 1
Price: negotiation
Packaging Details: carton box
Delivery Time: 1-3working days
Payment Terms: T/T
Supply Ability: 100,000
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Detail Information

Memory Type: Non-Volatile Memory Format: EEPROM
Memory Size: 4Mbit Memory Organization: 512K X 8
Memory Interface: Parallel Write Cycle Time - Word, Page: 10ms
Access Time: 200 Ns Voltage - Supply: 4.5V ~ 5.5V
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AT28C040-20FI

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AT28C040-20FI EEPROM Memory IC

Product Description

AT28C040-20FI EEPROM Memory IC 4Mbit Parallel 200 ns 32-FlatPack Bottom-Brazed

 

Specifications of AT28C040-20FI

 

TYPE DESCRIPTION
Category Integrated Circuits (ICs)
  Memory
  Memory
Mfr Microchip Technology
Series -
Package Tube
Memory Type Non-Volatile
Memory Format EEPROM
Technology EEPROM
Memory Size 4Mbit
Memory Organization 512K x 8
Memory Interface Parallel
Write Cycle Time - Word, Page 10ms
Access Time 200 ns
Voltage - Supply 4.5V ~ 5.5V
Operating Temperature -40°C ~ 85°C (TC)
Mounting Type Surface Mount
Package / Case 32-CFlatPack
Supplier Device Package 32-FlatPack, Ceramic Bottom-Brazed
Base Product Number AT28C040

 

Specifications of AT28C040-20FI

 

• Read Access Time – 200 ns
• Automatic Page Write Operation
– Internal Address and Data Latches for 256 Bytes
– Internal Control Timer
• Fast Write Cycle Time
– Page Write Cycle Time – 10 ms Maximum
– 1 to 256 Byte Page Write Operation
• Low Power Dissipation
– 50 mA Active Current
• Hardware and Software Data Protection
• DATA Polling for End of Write Detection
• High Reliability CMOS Technology
– Endurance: 10,000 Cycles
– Data Retention: 10 Years
• Single 5V ± 10% Supply
• CMOS and TTL Compatible Inputs and Outputs
• JEDEC Approved Byte-Wide Pinout

 

 

Introduction of AT28C040-20FI


The AT28C040 is a high-performance electrically erasable and programmable readonly memory (EEPROM). Its 4 megabits of memory is organized as 524,288 words by 8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers access times to 200 ns with power dissipation of just 440 mW.

 

 

 

Environmental & Export Classifications of AT28C040-20FI

 

ATTRIBUTE DESCRIPTION
RoHS Status RoHS non-compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN 3A001A2C
HTSUS 8542.32.0051

 

AT28C040-20FI EEPROM Memory IC 4Mbit Parallel 200 Ns 32-FlatPack Bottom-Brazed 0

 

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