• IS46TR16256AL-125KBLA2 SDRAM - DDR3L Memory IC 4Gbit Parallel 800 MHz 20 Ns 96-TWBGA
IS46TR16256AL-125KBLA2 SDRAM - DDR3L Memory IC 4Gbit Parallel 800 MHz 20 Ns 96-TWBGA

IS46TR16256AL-125KBLA2 SDRAM - DDR3L Memory IC 4Gbit Parallel 800 MHz 20 Ns 96-TWBGA

Product Details:

Place of Origin: original
Brand Name: original
Certification: original
Model Number: IS46TR16256AL-125KBLA2

Payment & Shipping Terms:

Minimum Order Quantity: 1
Price: negotiation
Packaging Details: carton box
Delivery Time: 1-3working days
Payment Terms: T/T
Supply Ability: 100,000
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Detail Information

Memory Type: Volatilec Memory Format: DRAM
Technology: SDRAM - DDR3L Memory Size: 4Gbit
Memory Organization: 256M X 16 Memory Interface: Parallel
Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns
Access Time: 20 Ns
High Light:

IS46TR16256AL-125KBLA2

,

SDRAM DDR3L Memory IC

,

800 MHz Memory IC

Product Description

  IS46TR16256AL-125KBLA2 SDRAM - DDR3L Memory IC 4Gbit Parallel 800 MHz 20 ns 96-TWBGA

 

IC DRAM 4GBIT PARALLEL 96TWBGA

 

Specifications of IS46TR16256AL-125KBLA2

 

TYPE DESCRIPTION
Category Integrated Circuits (ICs)
Memory
Mfr ISSI, Integrated Silicon Solution Inc
Series -
Package Tray
Product Status Obsolete
Memory Type Volatile
Memory Format DRAM
Technology SDRAM - DDR3L
Memory Size 4Gbit
Memory Organization 256M x 16
Memory Interface Parallel
Clock Frequency 800 MHz
Write Cycle Time - Word, Page 15ns
Access Time 20 ns
Voltage - Supply 1.283V ~ 1.45V
Operating Temperature -40°C ~ 105°C (TC)
Mounting Type Surface Mount
Package / Case 96-TFBGA
Supplier Device Package 96-TWBGA (9x13)
Base Product Number IS46TR16256

 
Features of 
IS46TR16256AL-125KBLA2


* Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
* Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
* High speed data transfer rates with system frequency up to 1066 MHz
* 8 internal banks for concurrent operation
* 8n-Bit pre-fetch architecture
* Programmable CAS Latency
* Programmable Additive Latency: 0, CL-1,CL-2
* Programmable CAS WRITE latency (CWL) based on tCK
* Programmable Burst Length: 4 and 8
* Programmable Burst Sequence: Sequential or Interleave
* BL switch on the fly
* Auto Self Refresh(ASR)
* Self Refresh Temperature(SRT)
* Refresh Interval:
- 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
- 3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
* Partial Array Self Refresh
* Asynchronous RESET pin
* TDQS (Termination Data Strobe) supported (x8 only)
* OCD (Off-Chip Driver Impedance Adjustment)
* Dynamic ODT (On-Die Termination)
* Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
* Write Leveling
* Up to 200 MHz in DLL off mode
* Operating temperature:
- Commercial (TC = 0°C to +95°C)
- Industrial (TC = -40°C to +95°C)
- Automotive, A1 (TC = -40°C to +95°C)
- Automotive, A2 (TC = -40°C to +105°C)

 

 

Applications of IS46TR16256AL-125KBLA2


Configuration:
- 512Mx8
- 256Mx16
Package:
- 96-ball BGA (9mm x 13mm) for x16
- 78-ball BGA (9mm x 10.5mm) for x8

 

 

Environmental & Export Classifications of IS46TR16256AL-125KBLA2

 

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.32.0036

 

IS46TR16256AL-125KBLA2 SDRAM - DDR3L Memory IC 4Gbit Parallel 800 MHz 20 Ns 96-TWBGA 0

 

  
 

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