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MT41K512M16HA-125IT Memory IC With 8Gbit Parallel 800 MHz 13.5 ns 96-FBGA
Product Details:
| Place of Origin: | original |
| Brand Name: | original |
| Certification: | original |
| Model Number: | MT41K512M16HA-125IT:A |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1 |
|---|---|
| Price: | negotiation |
| Packaging Details: | carton box |
| Delivery Time: | 1-3working days |
| Payment Terms: | T/T |
| Supply Ability: | 100,000 |
|
Detail Information |
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| Technology: | SDRAM - DDR3L | Memory Size: | 8Gbit |
|---|---|---|---|
| Memory Organization: | 512M X 16 | Memory Interface: | Parallel |
| Clock Frequency: | 800 MHz | Access Time: | 13.5 Ns |
| Voltage - Supply: | 1.283V ~ 1.45V | Operating Temperature: | -40°C ~ 95°C (TC) |
| High Light: | MT41K512M16HA-125IT Memory IC,8Gbit Parallel Memory IC |
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Product Description
MT41K512M16HA-125IT : A Memory IC With 8Gbit Parallel 800 MHz 13.5 ns 96-FBGA
MT41K512M16HA-125 IT:A IC DRAM 8GBIT PARALLEL 96FBGA
Specifications of MT41K512M16HA-125 IT:A
| TYPE | DESCRIPTION |
| Category | Integrated Circuits (ICs) |
| Memory | |
| Mfr | Micron Technology Inc. |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | DRAM |
| Technology | SDRAM - DDR3L |
| Memory Size | 8Gbit |
| Memory Organization | 512M x 16 |
| Memory Interface | Parallel |
| Clock Frequency | 800 MHz |
| Write Cycle Time - Word, Page | - |
| Access Time | 13.5 ns |
| Voltage - Supply | 1.283V ~ 1.45V |
| Operating Temperature | -40°C ~ 95°C (TC) |
| Mounting Type | Surface Mount |
| Package / Case | 96-TFBGA |
| Supplier Device Package | 96-FBGA (9x14) |
| Base Product Number | MT41K512M16 |
Features of MT41K512M16HA-125 IT:A
• VDD = VDDQ = 1.35V (1.283–1.45V)
• Backward compatible to VDD = VDDQ = 1.5V ±0.075V
– Supports DDR3L devices to be backward compatible in 1.5V applications
• Differential bidirectional data strobe
• 8n-bit prefetch architecture
• Differential clock inputs (CK, CK#)
• 8 internal banks
• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals
• Programmable CAS (READ) latency (CL)
• Programmable posted CAS additive latency (AL)
• Programmable CAS (WRITE) latency (CWL)
• Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])
• Selectable BC4 or BL8 on-the-fly (OTF)
• Self refresh mode
• TC of 95°C
– 64ms, 8192-cycle refresh up to 85°C
– 32ms, 8192-cycle refresh at >85°C to 95°C
• Self refresh temperature (SRT)
• Automatic self refresh (ASR)
• Write leveling
• Multipurpose register
• Output driver calibration
Descriptions of MT41K512M16HA-125 IT:A
DDR3L (1.35V) SDRAM is a low voltage version of the DDR3 (1.5V) SDRAM. Refer to a DDR3 (1.5V) SDRAM data sheet specifications when running in 1.5V compatible mode.
Environmental & Export Classifications of MT41K512M16HA-125 IT:A
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8542.32.0036 |
