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FDV301N N-Channel 25 V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
Product Details:
| Place of Origin: | original |
| Brand Name: | original |
| Certification: | original |
| Model Number: | FDV301N |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1 |
|---|---|
| Price: | negotiation |
| Packaging Details: | carton box |
| Delivery Time: | 3-5ddays |
| Payment Terms: | T/T |
| Supply Ability: | 1000 |
|
Detail Information |
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| FET Type: | N-Channel | Technology: | MOSFET (Metal Oxide) |
|---|---|---|---|
| Drain To Source Voltage (Vdss): | 25 V | 25 V: | 220mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 4.5V | Rds On (Max) @ Id, Vgs: | 4Ohm @ 400mA, 4.5V |
| Vgs(th) (Max) @ Id: | 1.06V @ 250µA | Gate Charge (Qg) (Max) @ Vgs: | 0.7 NC @ 4.5 V |
| Vgs (Max): | ±8V | ||
Product Description
FDV301N N-Channel 25 V 220mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
Specifications of FDV301N
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Products |
| Transistors | |
| FETs, MOSFETs | |
| Single FETs, MOSFETs | |
| Mfr | onsemi |
| Series | - |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 25 V |
| Current - Continuous Drain (Id) @ 25°C | 220mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.7V, 4.5V |
| Rds On (Max) @ Id, Vgs | 4Ohm @ 400mA, 4.5V |
| Vgs(th) (Max) @ Id | 1.06V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 0.7 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 350mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Base Product Number | FDV301 |
Features of FDV301N
• 25 V, 0.22 A Continuous, 0.5 A Peak
♦ RDS(on) = 5 @ VGS = 2.7 V
♦ RDS(on) = 4 @ VGS = 4.5 V
• Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits. VGS(th) < 1.06 V
• Gate−Source Zener for ESD Ruggedness. > 6 kV Human Body Model
• Replace Multiple NPN Digital Transistors with One DMOS FET
• This Device is Pb−Free and Halide Free
Applications of FDV301N
This N−Channel logic level enhancement mode field effect transistor is produced using onsemi’s proprietary, high cell density, DMOS technology.
Environmental & Export Classifications of FDV301N
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
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