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EMD4DXV6T1G Pre-Biased Bipolar Transistor 1 NPN 1 PNP 50V 100mA 500mW
Product Details:
| Place of Origin: | original |
| Brand Name: | original |
| Certification: | original |
| Model Number: | EMD4DXV6T1G |
Payment & Shipping Terms:
| Minimum Order Quantity: | 1 |
|---|---|
| Price: | negotiation |
| Packaging Details: | carton box |
| Delivery Time: | 3-5ddays |
| Payment Terms: | T/T |
| Supply Ability: | 1000 |
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Detail Information |
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| Current - Collector (Ic) (Max): | 100mA | Voltage - Collector Emitter Breakdown (Max): | 50 V |
|---|---|---|---|
| Resistor - Base (R1): | 47kOhms, 10kOhms | DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA | Current - Collector Cutoff (Max): | 500nA |
| Power - Max: | 500mW | Mounting Type: | Surface Mount |
Product Description
EMD4DXV6T1G Pre-Biased Bipolar Transistor 1 NPN 1 PNP 50V 100mA 500mW
Specifications of EMD4DXV6T1G
| TYPE | DESCRIPTION |
| Category | Discrete Semiconductor Products |
| Transistors | |
| Bipolar (BJT) | |
| Bipolar Transistor Arrays, Pre-Biased | |
| Mfr | onsemi |
| Series | - |
| Package | Tape & Reel (TR) |
| Cut Tape (CT) | |
| Product Status | Active |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 47kOhms, 10kOhms |
| Resistor - Emitter Base (R2) | 47kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 500mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | SOT-563 |
| Base Product Number | EMD4DXV6 |
Features of EMD4DXV6T1G
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• These are Pb−Free Devices
Applications of EMD4DXV6T1G
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor.
Environmental & Export Classifications of EMD4DXV6T1G
| ATTRIBUTE | DESCRIPTION |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.21.0095 |
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