• BGS8M2 RF Amplifier Integrated Circuit Chip 1.8GHz ~ 2.2GHz 6-XSON 1.1x0.7
BGS8M2 RF Amplifier Integrated Circuit Chip 1.8GHz ~ 2.2GHz 6-XSON 1.1x0.7

BGS8M2 RF Amplifier Integrated Circuit Chip 1.8GHz ~ 2.2GHz 6-XSON 1.1x0.7

Product Details:

Place of Origin: original
Brand Name: original
Certification: original
Model Number: HEF4013BTT,118

Payment & Shipping Terms:

Minimum Order Quantity: 1
Price: negotiation
Packaging Details: carton box
Delivery Time: 1-3working days
Payment Terms: T/T
Supply Ability: 100,000
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Detail Information

Frequency: 1.8GHz ~ 2.2GHz Gain: 14.4dB
Noise Figure: 0.85dB Voltage - Supply: 1.5V ~ 3.1V
Current - Supply: 5.8mA Test Frequency: 2.2GHz
High Light:

BGS8M2 RF Amplifier Integrated Circuit Chip

,

2.2GHz Integrated Circuit Chip

Product Description

BGS8M2 RF Amplifier Integrated Circuit Chip 1.8GHz ~ 2.2GHz 6-XSON (1.1x0.7)

 

BGS8M2 IC RF AMP 1.8GHZ-2.2GHZ 6XSON

 

Specifications of BGS8M2/BGS8M2X

 

TYPE DESCRIPTION
Category RF and Wireless
RF Amplifiers
Series -
Package Tape & Reel (TR)
Cut Tape (CT)
Product Status Active
Frequency 1.8GHz ~ 2.2GHz
P1dB -
Gain 14.4dB
Noise Figure 0.85dB
RF Type -
Voltage - Supply 1.5V ~ 3.1V
Current - Supply 5.8mA
Test Frequency 2.2GHz
Mounting Type Surface Mount
Package / Case 6-XFDFN
Supplier Device Package 6-XSON (1.1x0.7)
Base Product Number BGS8M2

 
Features of 
BGS8M2/BGS8M2X


• Operating frequency from 1805 MHz to 2200 MHz
• Noise figure = 0.85 dB
• Gain 14.4 dB
• High input 1 dB compression point of -3.5 dBm
• Bypass switch insertion loss of 2.2 dB
• High in band IP3i of 3.5 dBm
• Supply voltage 1.5 V to 3.1 V
• Self-shielding package concept
• Integrated supply decoupling capacitor
• Optimized performance at a supply current of 5.8 mA
• Power-down mode current consumption < 1 µA
• Integrated temperature stabilized bias for easy design
• Require only one input matching inductor
• Input and output DC decoupled
• ESD protection on all pins (HBM > 2 kV)
• Integrated matching for the output
• Available in 6-pins leadless package 1.1 mm x 0.7 mm x 0.37 mm; 0.4 mm pitch:SOT1232
• 180 GHz transit frequency - SiGe:C technology
• Moisture sensitivity level 1

 

 

Applications of BGS8M2/BGS8M2X


• LNA for LTE reception in smart phones
• Feature phones
• Tablet PCs
• RF front-end modules

 

 

Environmental & Export Classifications of BGS8M2/BGS8M2X

 

ATTRIBUTE DESCRIPTION
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8542.33.0001

 

BGS8M2 RF Amplifier Integrated Circuit Chip 1.8GHz ~ 2.2GHz 6-XSON 1.1x0.7 0

 


 

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